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Halbleitertechnologie

Dipl.-Ing., Dipl.-Phys. Marcel R. Müller – Wissenschaftlicher Angestellter


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Ausgeschieden !

Arbeitsgebiete
  • Graphen-Nanoribbon FETs

  • InAs-Nanodraht FETs

  • Elektronenstrahl-Nanostrukturierung

  • Aluminium CMP

Veröffentlichungen


Bücher, Zeitschriften, Tagungsbände

  • K.T. Kallis, D. Dietz, E. Subasi, M.R. Müller, C. Kontis and C.M. Zimmer
    "Design, simulation, fabrication an characterization of nano-scaled acceleration grids"
    In: Microelectronic Engineering 121 (2014), p. 118-121

  • M. R. Müller, A. Gumprich, F. Schütte, K. T. Kallis, U. Künzelmann, S. Engels, C. Stampfer,
    N. Wilcke and J. Knoch

    "Buried triple-gate structures for advanced field-effect transistor devices"
    In: Microelectronic Engineering, Volume 119 (May 2014), pp. 95-99

  • U. Künzelmann, M. R. Müller, K. T. Kallis, F. Schütte, S. Menzel, S. Engels, J. Fong, C. Lin, J. Dysard,
    J.W. Bartha and J. Knoch

    "Chemical-Mechanical Planarization of Aluminium Damascene Structures",
    Int. Conference on Planarization/CMP Technology (ICPT 2012), Proceedings, pp. 371-376

  • C. Kontis, C. Küchenmeister, M. Müller, K. Kallis and J. Knoch
    „Optimizing the identification of mono- and bilayer graphene on multilayer substrates"
    In: Applied Optics, Volume 51, Issue 3, January 2012, pp. 385-389

  • M. R. Müller, Q.T. Zhao, C. Urban, C. Sandow, D. Buca, S. Lenk, S. Estévez and S. Mantl
    "Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation",
    In: Materials Science and Engineering B, Vol. 154-155, (2008), pp. 168-171

  • C. Urban, Q. T. Zhao, C. Sandow, M. R. Müller, U. Breuer and S. Mantl
    "Schottky barrier height modulation by Arsenic Dopant segregation",
    Ultimate Integration of Silicon (ULIS) 2008, Proceedings, pp. 151-154


Vorträge auf nationalen und internationalen Tagungen


    • M. R. Müller, A. Gumprich, K. T. Kallis, U. Künzelmann, S. Engels, C. Stampfer, N. Wilck,
      B. Hadam and J. Knoch

      „Buried Triple-Gate Structures for InAs-Nanowire Field-Effect Transistor Devices“
      2013 MRS Fall Meeting & Exhibit, Boston, Massachusetts, USA 2013, December 1-6

    • K. T. Kallis, E. Subasi, C. Kontis, M. R. Müller and C. M. Zimmer
      „Design, simulation, fabrication and characterisation of nano-scaled acceleration grids“
      39th International Conference on Micro- and Nanoengineering (MNE'13), London, Great Britain 2013,
      September 16-19


    Posterbeiträge auf internationalen Tagungen

    • M. R. Müller, A. Gumprich, K. T. Kallis, U. Künzelmann, S. Engels, C. Stampfer, N. Wilck,
      B. Hadam and J. Knoch

      „Triple-Gate Structures for Advanced Field-Effect Transistor Devices”
      39th International Conference on Micro- and Nanoengineering (MNE'13), London, Great Britain 2013,
      September 16-19

    • U. Künzelmann, M. R. Müller, S. Menzel, C. Lin, J. Dysard, J. W. Bartha and J. Knoch
      "Morphological and Topological Effects during the CMP of Aluminium, Levitronix Ulrapure",
      User Conference 2013 and 29th European CMP, Users Meeting Spring 2013, Zurich, Switzerland 2013,
      Apr. 11-12


    • J. Knoch and M. R. Müller
      "New materials and architectures for beyond CMOS devices",
      Brazilian Materials Research Society Meeting (SBPMat) 2012, Florianopolis, Brazil 2012, Sept. 23-27

    • U. Künzelmann, M. R. Mueller, K. T. Kallis, F. Schuette, S. Menzel, S. Engels, J. Fong, C. Lin,
      J. Dysard, J. W. Bartha and J. Knoch

      „Chemical-Mechanical Planarization of Aluminium Damascene Structures”
      International Conference on Planarization/CMP Technology, ICPT 2012,  Grenoble, France 2012, October 15-17


    • C. Kontis, C. Küchenmeister, M. R. Müller and J. Knoch
      " Optimizing the identification of graphene mono- and bilayers on multi-layered systems",
      ImagineNano - Graphene 2011, Bilbao, Spain 2011, Apr. 11-14

    • M. R. Müller, Q. T. Zhao, C. Urban, C. Sandow, U. Breuer and S. Mantl
      "Schottky-barrier height tuning of Ni and Pt germanide/n-Ge contacts using dopant segregation",
      9th Int. Conference on Solid-State and Integrated-Circuit Technology (ICSICT 2008),
      Beijing, China 2008, Oct. 20-23